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ECH8662 Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer ECH8662
Beschreibung N-Channel Power MOSFET / Transistor
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 7 Seiten
ECH8662 Datasheet, Funktion
Ordering number : ENA1259A
ECH8662
N-Channel Power MOSFET
40V, 6.5A, 30mΩ, Dual ECH8
http://onsemi.com
Features
Low ON-resistance
2.5V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
40
±10
6.5
40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
ECH8662-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TH
Lot No.
TL
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/70908PE TIIM TC-00001419 No. A1259-1/7






ECH8662 Datasheet, Funktion
Outline Drawing
ECH8662-TL-H
ECH8662
Land Pattern Example
Mass (g) Unit
0.02
* For reference
mm
0.4
Unit: mm
0.65
No. A1259-6/7

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