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Teilenummer | ECH8653 |
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Beschreibung | N-Channel Power MOSFET / Transistor | |
Hersteller | ON Semiconductor | |
Logo | ||
Gesamt 7 Seiten Ordering number : ENA0851A
ECH8653
N-Channel Power MOSFET
20V, 7.5A, 20mΩ, Dual ECH8
http://onsemi.com
Features
• Low ON-resistance
• Best suited for LiB charging and discharging switch
• Halogen free compliance
• 4V drive
• Common-drain type
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Storage Temperature
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
20
±10
7.5
40
1.4
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-003
Top View
2.9
85
ECH8653-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
WY
TL LOT No.
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/53007PE TIIM TC-00000702 No. A0851-1/7
Outline Drawing
ECH8653-TL-H
ECH8653
Land Pattern Example
Mass (g) Unit
0.02
* For reference
mm
0.4
Unit: mm
0.65
No. A0851-6/7
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ ECH8653 Schematic.PDF ] |
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