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PDF DMTH4007SPDQ Data sheet ( Hoja de datos )

Número de pieza DMTH4007SPDQ
Descripción DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMTH4007SPDQ
40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary
BVDSS
40V
RDS(ON) Max
8.6m@ VGS = 10V
ID Max
TC = +25°C
(Note 10)
45A
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
High Conversion Efficiency
Low RDS(ON) Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI®5060-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
Top View
Pin1
Bottom View
S1
G1
S2
G2
Pin out
Top View
D1
D1
D2
G1
D2
D1 D2
G2
S1 S2
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMTH4007SPDQ-13
PowerDI5060-8
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
PowerDI is a registered trademark of Diodes Incorporated.
DMTH4007SPDQ
Document number: DS38393 Rev. 1 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated

1 page




DMTH4007SPDQ pdf
DMTH4007SPDQ
0.02
0.015
0.01
0.005
VGS = 10V
ID = 15A
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
30
4
3.5
3
2.5 ID = 1mA
ID = 250µA
2
1.5
1
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
25 Ciss
20
1000
Coss
15 TA= 125C
TA= 85C
10 TA= 150C
TA= 25C
100
Crss
5
TA= 175C
TA= -55C
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
1.5
8
f = 1MHz
10
0 5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
100
RD S( o n )
Limited
PW = 10µs
10 PW = 1s
6 VDS = 30V
ID = 20A
PW = 100ms
PW = 10ms
4
2
0 0 5 10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
PW = 1ms
1
T J(m ax)= 175°C
TC = 25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.1
0.1 1
PW = 100µs
PW = 1µs
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMTH4007SPDQ
Document number: DS38393 Rev. 1 - 2
5 of 8
www.diodes.com
November 2015
© Diodes Incorporated

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