PDF PHD13003C Data sheet ( Hoja de datos )

Número de pieza	PHD13003C
Descripción	NPN power transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! PHD13003C NPN power transistor with integrated diode Rev. 01 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package 1.2 Features and benefits Fast switching High typical DC current gain High voltage capability Integrated anti-parallel E-C diode 1.3 Applications Compact fluorescent lamps (CFL) Low power electronic lighting ballasts Off-line self-oscillating power supplies (SOPS) for battery charging 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current DC Ptot total power Tlead ≤ 25 °C; see Figure 1 dissipation VCESM collector-emitter VBE = 0 V peak voltage Static characteristics hFE DC current gain IC = 0.5 A; VCE = 2 V; Tj = 25 °C Min Typ Max Unit - - 1.5 A - - 2.1 W - - 700 V 8 17 25 1 page NXP Semiconductors PHD13003C NPN power transistor with integrated diode 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics ICES collector-emitter cut-off current ICEO IEBO VCEOsus VCEsat collector-emitter cut-off current emitter-base cut-off current collector-emitter sustaining voltage collector-emitter saturation voltage VBEsat VF hFE base-emitter saturation voltage forward voltage DC current gain Dynamic characteristics ton turn-on time ts storage time tf fall time Conditions VBE = 0 V; VCE = 700 V VBE = 0 V; VCE = 700 V; Tj = 100 °C VCE = 400 V; IB = 0 A; Tlead = 25 °C VEB = 9 V; IC = 0 A; Tlead = 25 °C IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 °C; see Figure 3; see Figure 4 IC = 0.5 A; IB = 0.1 A; Tlead = 25 °C IC = 1 A; IB = 0.25 A; Tlead = 25 °C IC = 1.5 A; IB = 0.5 A; Tlead = 25 °C IC = 0.5 A; IB = 0.1 A; Tlead = 25 °C IC = 1 A; IB = 0.25 A; Tlead = 25 °C IF = 0.5 A; Tj = 25 °C IC = 0.5 A; VCE = 2 V; Tj = 25 °C IC = 1 A; VCE = 2 V; Tj = 25 °C IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; see Figure 5; see Figure 6 IC = 1 A; IBon = 0.2 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load; see Figure 7; see Figure 8 IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; see Figure 5; see Figure 6 IC = 0.5 A; IBon = 0.1 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load; see Figure 7; see Figure 8 Min Typ Max Unit -- -- -- -- 400 - -- -- -- -- -- -- 8 17 59 1 mA 5 mA 0.1 mA 1 mA -V 0.5 V 1V 1.5 V 1V 1.2 V 1.5 V 25 15 - - 1 µs - - 4 µs - 0.8 - µs - - 0.7 µs - 0.1 - µs PHD13003C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 5 of 12 5 Page NXP Semiconductors PHD13003C NPN power transistor with integrated diode agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PHD13003C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 11 of 12 11 Page

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