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Número de pieza | PMEG6020ELR | |
Descripción | 2A low leakage current Schottky barrier rectifier | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! PMEG6020ELR
60 V, 2 A low leakage current Schottky barrier rectifier
3 June 2014
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 2 A
• Reverse voltage: VR ≤ 60 V
• Extremely low leakage current
• Low forward voltage
• High power capability due to clip-bonding technology
• Small and flat lead SMD plastic package
• AEC-Q101 qualified
• High temperature Tj ≤ 175 °C
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
• Low power consumption applications
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
IR
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
reverse current
Conditions
δ = 0.5; f = 20 kHz; Tsp ≤ 160 °C;
square wave
Tj = 25 °C
IF = 2 A; Tj = 25 °C
VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
Min Typ Max Unit
- - 2A
- - 60 V
- 690 760 mV
- 90 300 nA
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1 page NXP Semiconductors
102
Zth(j-a)
(K/W)
10
duty cycle =
1 0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02 0.01
1
0
PMEG6020ELR
60 V, 2 A low leakage current Schottky barrier rectifier
006aab651
10- 1
10- 3
10- 2
10- 1
Ceramic PCB, Al2O3, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6020ELR
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 15
5 Page NXP Semiconductors
PMEG6020ELR
60 V, 2 A low leakage current Schottky barrier rectifier
12. Package outline
Plastic surface-mounted package; 2 leads
D
EA
SOD123W
Lp
(1)
1
HE
OUTLINE
VERSION
SOD123W
IEC
c
Lp
A
2
bp
wA
REFERENCES
JEDEC
JEITA
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
bp
c
D
E HE Lp w
mm
1.1 1.05 0.22 2.8
0.9 0.75 0.10 2.4
1.9
1.5
3.7
3.3
0.6
0.3
0.13
Note
1. The marking bar indicates the cathode.
EUROPEAN
PROJECTION
ISSUE DATE
07-06-28
08-11-06
Fig. 16. Package outline SOD123W
13. Soldering
4.4
2.9
2.8
2.1 1.6
1.1
(2×)
1.2
(2×)
Fig. 17. Reflow soldering footprint for SOD123W
1.1 1.2
(2×) (2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sod123w_fr
PMEG6020ELR
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 15
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PMEG6020ELR | 2A low leakage current Schottky barrier rectifier | NXP Semiconductors |
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