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PDF CHA2494-98F Data sheet ( Hoja de datos )
| Número de pieza | CHA2494-98F | |
| Descripción | 34-44GHz Low Noise Amplifier | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CHA2494-98F (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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CHA2494-98F
RoHS COMPLIANT
34-44GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2494-98F is a wide band monolithic
low noise amplifier.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
RFin
Vg
Vd
RFout
Main Features
■ Broadband performances: 34-44GHz
■ 3dB noise figure
■ 20dB gain
■ 20dBm Output IP3
■ DC bias: Vd=4V @ Id=80mA
■ Chip size 2.59x1.16x0.1mm
Noise figure versus temperature
10
9
-40°C
+25°C
+85°C
8
7
6
5
4
3
2
1
0
32 34 36 38 40 42 44
Frequency (GHz)
46
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF
OIP3
Noise Figure
3rd order intercept point
Min Typ Max Unit
34 44 GHz
20 dB
3.0 dB
20 dBm
Ref. : DSCHA24941144 - 24 May 11
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
1 page  
34-44GHz Low Noise Amplifier
CHA2494-98F
Typical Test Fixture Measurements
Tamb = +25°C, Vd = +4V, Id = 80mA
10
9
8
7
6
5
4
3
2
1
0
32
Noise figure versus frequency & temperature
-40°C
+25°C
+85°C
34 36 38 40 42 44
Frequency (GHz)
46
Output Power @ 1dB comp. versus
temperature at 80mA
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
34
25 C
-40 C
+85 C
36 38 40
Frequency (GHz)
42
44
Output Power @ 1dB comp. versus
temperature at 120mA
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
34
25 C
-40 C
+85 C
36 38 40
Frequency (GHz)
42
44
Ref. : DSCHA24941144 - 24 May 11
5/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
5 Page 
34-44GHz Low Noise Amplifier
CHA2494-98F
Notes
Due to ESD protection circuits on RF input and output, an external capacitance might be
requested to isolate the product from external voltage that could be present on the RF
accesses.
Vg
RFin
RFout
Vd
ESD protections is also implemented on gate access common to 3rd and 4th stage (1st and 2nd
stage are self-biased).
Due to BCB coating on the chip, qualification domain implies the chip must be glued.
Biasing conditions:
Vg could be tuned to reach 120mA in order to increase the output power and the gain (see
pages 5 & 6).
The current has no influence on Noise figure.
Ref. : DSCHA24941144 - 24 May 11
11/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet CHA2494-98F.PDF ] | |
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