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PDF CHA2069-99F Data sheet ( Hoja de datos )

Número de pieza CHA2069-99F
Descripción 18-31GHz Low Noise Amplifier
Fabricantes United Monolithic Semiconductors 
Logotipo United Monolithic Semiconductors Logotipo



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CHA2069-99F
18-31GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The circuit is a three-stage self biased wide
band monolithic low noise amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
Main Features
Broad band performance 16-31GHz
2.5dB noise figure
22dB gain, 1dB gain flatness
Low DC power consumption, 55mA
20dBm 3rd order intercept point
Chip size : 2,170 x 1,270x 0.1mm
24
22
20
18
16
14
12
10
8
6
4
2
0
14 16 18 20 22 24 26 28 30 32 34
Frequency ( GHz )
On wafer typical measurements.
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
NF Noise figure,18-31GHz
G Gain
G Gain flatness
Min Typ Max Unit
2.5 3.5 dB
18 22
dB
1 1.5 dB
Ref. : DSCHA20693246 - 03 Sep 13
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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CHA2069-99F pdf
18-31GHz Low Noise Amplifier
CHA2069-99F
Typical Test-Jig Results
Circuit Typical Response ( Test-Jig ) :
Tamb = +25°C
Vd = 4.5V ; B ,D & E =Pads grounded ; Id = 55mA
(G1, G2, A, C & F non connected )
These values are representative of the package assembly with input and output bonding
wires of typically 0.15nH.
Typical Linear measurements.
Typical NOISE Figure measurements.
Ref. : DSCHA20693246 - 03 Sep 13
5/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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