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Número de pieza | WFF3N80 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Wisdom technologies | |
Logotipo | ||
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No Preview Available ! Wisdom Semiconductor
WFF3N80
N-Channel MOSFET
Features
■ RDS(on) (Max 5.0 Ω )@VGS=10V
■ Gate Charge (Typical 15.0nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
TO-220F
123
Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
800
3.0
1.8*
12.0*
±30
336
10.7
4.0
39
0.31
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
3.2
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
1 page 5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet WFF3N80.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFF3N80 | N-Channel MOSFET | Wisdom technologies |
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