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Número de pieza | BFG540X | |
Descripción | NPN 9 GHz wideband transistor | |
Fabricantes | Philips | |
Logotipo | ||
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No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540; BFG540/X; BFG540/XR
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
1 page Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X;
BFG540/XR
600
handbook, halfpage
Ptot
(mW)
400
MBG249
200
0
0 50
VCE ≤ 10 V.
100 150 200
Ts (o C)
Fig.3 Power derating curve.
250
handbook, halfpage
hFE
200
150
100
50
0
10−2
10−1
1
MRA749
10 102
IC (mA)
VCE = 8 V; Tj = 25 °C.
Fig.4 DC current gain as a function of
collector current.
handbook, h1alfpage
Cre
(pF)
0.8
0.6
0.4
0.2
0
0
4
MRA750
8 12
VCB (V)
IC = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
handbook,1h2alfpage
fT
(GHz)
8
4
MRA751
VCE = 8 V
VCE = 4 V
0
10−1
1
10 102
IC (mA)
f = 1 GHz; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current.
September 1995
5
5 Page Philips Semiconductors
NPN 9 GHz wideband transistor
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
DB
Product specification
BFG540; BFG540/X;
BFG540/XR
SOT143B
E AX
y
e
4
1
b1
e1
vM A
HE
bp w M B
3
2
A
A1
Q
c
Lp
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1
0.48 0.88
0.38 0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9 1.7
2.5 0.45 0.55
2.1 0.15 0.45
0.2
0.1
0.1
OUTLINE
VERSION
SOT143B
September 1995
IEC
REFERENCES
JEDEC
EIAJ
11
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet BFG540X.PDF ] |
Número de pieza | Descripción | Fabricantes |
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BFG540X | NPN 9 GHz wideband transistor | Philips |
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