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Número de pieza | 1EDI20N12AF | |
Descripción | Single Channel MOSFET and GaN HEMT Gate Driver IC | |
Fabricantes | Infineon | |
Logotipo | ||
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No Preview Available ! 1EDI EiceDRIVER™ Compact
1EDI20N12AF
Single Channel MOSFET and GaN HEMT Gate Driver IC
1EDI20N12AF
Data Sheet
Rev. 2.0, 2015-06-01
Industrial Power Control
1 page 1EDI EiceDRIVER™ Compact
1EDI20N12AF
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Typical Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Block Diagram 1EDI20N12AF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
PG-DSO-8-51 (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Application Example Bipolar Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Application Example Unipolar Supply. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Propagation Delay, Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Typical Switching Behavior. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
UVLO Behavior. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
PG-DSO-8-51 (Plastic (Green) Dual Small Outline Package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Reference Layout for Thermal Data (Copper thickness 35 μm) . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Data Sheet
5 Rev. 2.0, 2015-06-01
5 Page 1EDI EiceDRIVER™ Compact
1EDI20N12AF
Pin Configuration and Functionality
IN- Inverting Driver Input
IN- inverted control signal for driver output if IN+ is set to high. (Output sourcing active at IN- = low and IN+ = high)
Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN-. An internal
pull-up-resistor favors off-state.
GND1
Ground connection of input circuit.
VCC2
Positive power supply pin of output driving circuit. A proper blocking capacitor has to be placed close to this supply
pin.
OUT+ Driver Source Output
Driver output pin sourcing current to turn on external switch transistor. During on-state the driving output is
switched to VCC2. Switching of this output is controlled by IN+ and IN-, resp.. This output will also be turned off
at an UVLO event.
During turn off the OUT+ terminal is able to sink approx. 100 mA.
OUT- Driver Sink Output)
Driver output pin sinking current to turn off external switch transistor. During off-state the driving output is switched
to GND2. Switching of this output is controlled by IN+ and IN-, resp.. In case of UVLO an active shut down keeps
the output low.
GND2 Reference Ground
Reference ground of the output driving circuit.
In case of a bipolar supply (positive and negative voltage with respect to switch source potential) this pin is
connected to the negative supply voltage.
Data Sheet
11 Rev. 2.0, 2015-06-01
11 Page |
Páginas | Total 22 Páginas | |
PDF Descargar | [ Datasheet 1EDI20N12AF.PDF ] |
Número de pieza | Descripción | Fabricantes |
1EDI20N12AF | Single Channel MOSFET and GaN HEMT Gate Driver IC | Infineon |
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