(PDF) CEH2321A Datasheet - P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEH2321A
Descripción	P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! CEH2321A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 G(3) D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -4.8 IDM -19.2 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units V V A A W C Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice 1 Rev 3. 2014.Feb http://www.cetsemi.com 1 page

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PDF CEH2321A Data sheet ( Hoja de datos )