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Número de pieza | EM48AM1684VTH | |
Descripción | 256Mb (4M x 4Bank x 16) Synchronous DRAM | |
Fabricantes | Eorex | |
Logotipo | ||
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EM48AM1684VTH
256Mb (4M×4Bank×16) Synchronous DRAM
Features
• Fully Synchronous to Positive Clock Edge
• Single 3.3V ±0.3V Power Supply
• LVTTL Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8
or Full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page)
– Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are Sampled at the Rising Edge of
the System Clock
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms (7.8us)
Description
The EM48AM1684VTH is Synchronous Dynamic
Random Access Memory (SDRAM) organized as
4Meg words x 4 banks by 16 bits. All inputs and
outputs are synchronized with the positive edge of
the clock.
The 256Mb SDRAM uses synchronized pipelined
architecture to achieve high speed data transfer
rates and is designed to operate at 3.3V low power
memory system. It also provides auto refresh with
power saving / down mode. All inputs and outputs
voltage levels are compatible with LVTTL.
Available packages: TSOPII 54P 400mil.
Ordering Information
Part No
EM48AM1684VTH-6
EM48AM1684VTH-7
EM48AM1684VTH-75
EM48AM1684VTH-6E
EM48AM1684VTH-7E
EM48AM1684VTH-75E
Organization
16M X 16
16M X 16
16M X 16
16M X 16
16M X 16
16M X 16
Max. Freq
166MHz @CL3
143MHz @CL3
133MHz @CL3
166MHz @CL3
143MHz @CL3
133MHz @CL3
Package
54pin TSOP(ll)
54pin TSOP(ll)
54pin TSOP(ll)
54pin TSOP(ll)
54pin TSOP(ll)
54pin TSOP(ll)
Grade
Commercial
Commercial
Commercial
Extended
Extended
Extended
Pb
Free
Free
Free
Free
Free
Free
May. 2013
1/17
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1 page eorex
EM48AM1684VTH
Recommended DC Operating Conditions
(VDD=3.3V±0.3V, TA=0°C ~70°C/TA=-25°C ~ +85°C for extended grade)
Symbol
Parameter
Test Conditions
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
ICC5
Operating Current (Note 1)
Precharge Standby Current in
Power Down Mode
Precharge Standby Current in
Non-power Down Mode
Active Standby Current in
Power Down Mode
Active Standby Current in
Non-power Down Mode
Operating Current (Burst
Mode) (Note 2)
Refresh Current (Note 3)
Burst length=2,
tRC≥tRC(min.), IOL=0mA,
One bank active
CKE≤VIL(max.), tCK=10ns
CKE≤VIL(max.), tCK= ∞
CKE≥VIL(min.), tCK=10ns,
/CS≥VIH(min.)
Input signals are changed
one time during 20ns
CKE≥VIL(min.), tCK= ∞ ,
Input signals are stable
CKE≤VIL(max.), tCK=10ns
CKE≤VIL(max.), tCK= ∞
CKE≥VIL(min.), tCK=10ns,
/CS≥VIH(min.)
Input signals are changed
one time during 20ns
CKE≥VIL(min.), tCK= ∞ ,
Input signals are stable
tCCD≥2CLKs, IOL=0mA
tRC≥tRC(min.)
ICC6 Self Refresh Current
CKE≤0.2V
*All voltages referenced to VSS.
Note 1: ICC1 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 2: ICC4 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 3: Input signals are changed only one time during tCK (min.)
Note 4: Standard power version.
Max.
80
10
5
30
25
30
25
50
35
100
115
5 (Note 4)
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Recommended DC Operating Conditions (Continued)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IIL Input Leakage Current
0≤VI≤VDDQ, VDDQ=VDD
All other pins not under test=0V
-1
+1 uA
IOL Output Leakage Current
0≤VO≤VDDQ, DOUT is disabled
-1
+1 uA
VOH High Level Output Voltage IO=-4mA
2.4 V
VOL Low Level Output Voltage IO=+4mA
0.4 V
May. 2013
5/17
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5 Page eorex
EM48AM1684VTH
Burst Type (A3)
Burst Length
A2 A1 A0
Sequential Addressing
Interleave Addressing
XX0
01
2
XX0
10
01
10
X00
0123
0123
X01
1230
4
X10
2301
1032
2301
X11
3012
3210
000
01234567
01234567
001
12345670
10325476
010
23456701
23016745
011
34567012
8
100
45670123
32107654
45670123
101
56701234
54761032
110
67012345
67452301
111
70123456
76543210
Full Page*
nnn
Cn Cn+1 Cn+2……
* Page length is a function of I/O organization and column addressing ×16 (CA0 ~ CA8):
Full page = 512bits
-
1. Command Truth Table
Command
Symbol
CKE
n-1 n
/CS
/RAS
/CAS
/WE
BA0,
BA1
A10
Ignore Command
DESL H X H X
X XXX
No Operation
NOP H X L H
H HXX
Burst Stop
BSTH H X L H H L X X
Read
READ H X L H L H V L
Read with Auto Pre-charge READA H X L H L H V H
Write
WRIT H X L H L L V L
Write with Auto Pre-charge WRITA H X L L
H HVH
Bank Activate
ACT H X L L
H HVV
Pre-charge Select Bank
PRE H X L L
H LVL
Pre-charge All Banks
PALL H X L L
H L XH
Mode Register Set
MRS H X L L
L LLL
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input
A11,
A9~A10
X
X
X
V
V
V
V
V
X
X
V
May. 2013
11/17
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11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet EM48AM1684VTH.PDF ] |
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