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Número de pieza | EM48AM1684LBA | |
Descripción | 256Mb (4M x 4Bank x 16) Synchronous DRAM | |
Fabricantes | Eorex | |
Logotipo | ||
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Revision History
Revision 0.1 (Jul. 2006)
- First release.
Revision 0.2 (Mar. 2009)..
- Add “E” grade Part No.
EM48AM1684LBA
Mar. 2009
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EM48AM1684LBA
Absolute Maximum Rating
Symbol
Item
Rating
Units
VIN, VOUT
Input, Output Voltage
-0.3 ~ VDDQ+0.3
V
VDD, VDDQ
Power Supply Voltage
-0.3 ~ +2.7
V
TOP Operating Temperature Range
Commercial
Extended
0 ~ +70
-25 ~ +85
°C
TSTG
Storage Temperature Range
-55 ~ +150
°C
PD Power Dissipation
0.7 W
IOS Short Circuit Current
50 mA
Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could
cause permanent damage. The device is not meant to be operated under conditions outside the
limits described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Capacitance (VCC=1.8V ± 0.1V, f=1MHz, TA=25°C)
Symbol
CCLK
CI
CO
Parameter
Clock Capacitance
Input Capacitance for CLK, CKE, Address,
/CS, /RAS, /CAS, /WE, DQML, DQMU
Input/Output Capacitance
Min.
1.5
1.5
3.0
Typ.
Max.
3.0
3.0
5.0
Units
pF
pF
pF
Recommended DC Operating Conditions (TA=0°C ~+70°C)
Symbol
Parameter
VDD Power Supply Voltage
VDDQ
Power Supply Voltage (for I/O Buffer)
VIH Input Logic High Voltage
VIL Input Logic Low Voltage
Note: * All voltages referred to VSS.
* VIH (max.) = VDD+0.8V for pulse width 4ns
* VIL (min.) = Vss-0.8V for pulse width 4ns
Min. Typ. Max. Units
1.65 1.8 1.95 V
1.65 1.8 1.95 V
0.8*VDDQ
-0.3
VDDQ+0.3
0.3
V
V
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EM48AM1684LBA
Address Input for Mode Register Set
BA1 BA0 A12/A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Operation Mode
CAS Latency
BT Burst Length
Burst Length
Sequential Interleave A2 A1 A0
1 1 000
2 2 001
4 4 010
8 8 011
Reserved Reserved 1 0 0
Reserved Reserved 1 0 1
Reserved Reserved 1 1 0
Full Page Reserved 1 1 1
Burst Type
Interleave
Sequential
A3
1
0
CAS Latency
A6
A5
A4
Reserved
0
0
0
Reserved
0
0
1
2 010
3 011
Reserved
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
BA1 BA0 A12/A11 A10 A9 A8 A7
00 0 0000
00 0 0100
Operation Mode
Normal
Burst Read with Single-bit Write
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11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet EM48AM1684LBA.PDF ] |
Número de pieza | Descripción | Fabricantes |
EM48AM1684LBA | 256Mb (4M x 4Bank x 16) Synchronous DRAM | Eorex |
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