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PDF ECH8660 Data sheet ( Hoja de datos )
| Número de pieza | ECH8660 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Ordering number : ENA1358B
ECH8660
Power MOSFET
30V, 4.5A, 59mΩ, –30V, –4.5A, 59mΩ, Complementary Dual ECH8
http://onsemi.com
Features
• The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
• 4V drive
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
When mounted on ceramic substrate (1200mm2×0.8mm)
N-channel P-channel
30 --30
±20 ±20
4.5 --4.5
30 --30
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
ECH8660-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TF
Lot No.
TL
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
87 6 5
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
42512 TKIM/D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/8
1 page  
ECH8660
2
10 VDS= --10V
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
| yfs | -- ID
Ta= --25°C 75°C
25°C
[Pch]
0.01
7
--0.001 2 3 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10
100
VDD= --15V
7 VGS= --10V
Drain
SW
Current,
Time
I-D-
-- A
ID
IT14190
[Pch]
5 td(off)
tf
3
2
tr
10
td(on)
7
5
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.2
1000
7
5
3
2
IS -- VSD
[Pch]
VGS=0V
--0.4
--0.6
--0.8
--1.0
--1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-D
-- V
VDS
IT14191
[Pch]
f=1MHz
Ciss
100 Coss
7 Crss
5
3
--0.1
23
--10
VDS= --10V
--9 ID= --4.5A
--8
5 7 --1.0
23
Drain Current,
VGS --
IQDg--
A
5 7 --10
IT14192
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 1 2 3 4 5 6 7 8 9 10 11
Total Gate Charge, Qg -- nC
IT14194
1.8
PD -- Ta
[Nch/Pch]
When mounted on ceramic substrate
1.6 (1200mm2×0.8mm)
1.5
1.4
1.3
1.2
1.0
0.8
Total
1unit
Dissipation
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14197
3
0 --5 --10 --15 --20 --25 --30
Drain-to-Source
A
Voltage,
SO
VDS
--
V
IT14193
[Pch]
57
3
IDP=
--30A
PW≤10μs
2
--10
7
5
ID=
--4.5A
3
11m0s0μs
10ms
2
--1.0
7
5
3
2
Operation in this
area is limited by
RDSD(oCno)p. eration10(T0ma=s25°C)
--0.1
7
5
Ta=25°C
3
2
Single pulse
When mounted on ceramic substrate
--0.01 (1200mm2×0.8mm)
--0.1 2 3 5 7 --1.0 2 3 5 7 --10
23 5
Drain-to-Source Voltage, VDS -- V IT14196
No. A1358-5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ECH8660.PDF ] | |
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