ECH8673 Datasheet PDF - ON Semiconductor
| Part Number | ECH8673 | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | ON Semiconductor | |
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Ordering number : ENA1892B
ECH8673
Power MOSFET
40V, 3.5A, 85mΩ, –40V –2.5A, 163mΩ, Complementary Dual ECH8
http://onsemi.com
Features
• ON-resistance Nch: RDS(on)1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.)
• 4V drive
• Halogen free compliance
• Nch+Pch MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
When mounted on ceramic substrate (1200mm2×0.8mm)
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
N-channel P-channel
40 --40
±20 ±20
3.5 --2.5
30 --30
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
ECH8673-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TU
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
TL
Electrical Connection
87 6 5
Lot No.
1234
Semiconductor Components Industries, LLC, 2013
August, 2013
80713 TKIM TC-00002982/61312 TKIM/D0810PE TKIM TC-00002347 No. A1892-1/8
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ECH8673
RDS(on) -- VGS
[Pch]
450
Ta=25°C
400 ID= --0.75A
350 --1.5A
300
250
200
150
100
50
0
0 --2 --4 --6 --8 --10 --12 --14 --16
Gate to So| uyrcfse V|ol-t-ageI,DVGS -- V
IT16168
[Pch]
10
7 VDS= --10V
5
3
2
1.0
Ta= --25°C75°C
7
5
25°C
3
2
0.1
--0.01 2 3
100
7
5
3
2
5 7 --0.1 2 3 5 7 --1.0
Drain
SW
Current,
Time
I-D-
-- A
ID
td(off)
tf
2 3 5 7 --10
IT16170
[Pch]
VDD= --20V
VGS= --10V
10 tr
7 td(on)
5
3
2
1.0
--0.1
23
--10
VDS= --20V
--9 ID= --2.5A
--8
5 7 --1.0
23
Drain Current,
VGS --
IQDg--
A
--7
--6
--5
--4
--3
--2
--1
0
012345
Total Gate Charge, Qg -- nC
5 7 --10
IT16172
[Pch]
67
IT16174
RDS(on) -- Ta
[Pch]
450
400
350
300
250
200
150
100
V GVVSG=GS-=-S4=-.-04-V-.15, 0VI.D,0I=VD,-=-I0D-.-7=05.A7--51A.5A
50
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT16169
--10
IS -- VSD
[Pch]
7 VGS=0V
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
1000
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT16171
[Pch]
f=1MHz
Ciss
100
7
5 Coss
3
2
10 Crss
7
5
3
2
1.0
0
--5 --10 --15 --20 --25 --30 --35 --40
Drain
to
Source
A
Voltage,
SO
VDS
--
V
--100
7
5
3
IDP= --30A (PW≤10μs)
2
IT16173
[Pch]
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
ID= --2.5A
Operation in this
area is limited by
11m00sμs
RDSD(Conop).erati1o0n0(1mT0asm=s25°C)
7
5
Ta=25°C
3 Single pulse
2 When mounted on ceramic substrate
--0.01 (1200mm2×0.8mm) 1unit
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2
3
Drain to Source Voltage, VDS -- V
5 7 --100
IT16175
No. A1892-5/8
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ECH8673 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ECH8673.PDF Datasheet ] | |
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