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Teilenummer | WPM2019 |
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Beschreibung | Single P-Channel Power MOSFET | |
Hersteller | WillSEMI | |
Logo | ||
Gesamt 6 Seiten WPM2019
Single P-Channel, -20V, -0.73A, Power MOSFET
VDS (V)
-20
Rds(on) (ȍ)
0.480@ VGS=̢4.5V
0.620@ VGS=̢2.5V
0.780@ VGS=̢1.8V
WPM2019
Http://www.sh-willsemi.com
D
S
G
Descriptions
SOT-523
The WPM2019 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2019 is Pb-free and
Halogen-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-523
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
D
3
12
GS
Pin configuration (Top view)
3
P9*
12
P9 =Device Code
* = Month(A~Z)
Marking
Order information
Device
Package
Shipping
WPM2019-3/TR SOT-523 3000/Reel&Tape
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.4
Package outline dimensions
SOT-523
WPM2019
Symbol
A
A1
A2
b1
b2
c
D
E
E1
e
e1
L
L1
©
Will Semiconductor Ltd.
Min.
0.700
0.000
0.700
0.150
0.250
0.100
1.500
0.700
1.450
0.900
0.260
0e
Dimensions in millimeter
Typ.
0.800
0.050
0.750
0.200
0.300
0.150
1.600
0.800
1.600
0.500TYP
1.000
0.400REF
Max.
0.900
0.100
0.800
0.250
0.350
0.200
1.700
0.900
1.750
1.100
0.460
8e
6 2015/08/25 – Rev. 1.4
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WPM2019 Schematic.PDF ] |
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