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Número de pieza | WPM2006 | |
Descripción | Power MOSFET and Schottky Diode | |
Fabricantes | WillSEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WPM2006 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! WPM2006
Power MOSFET and Schottky Diode
WPM2006
Features
z Featuring a MOSFET and Schottky Diode
z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
DFN2*2 -6L
Applications
z Li--Ion Battery Charging
z High Side DC-DC Conversion Circuits
z High Side Drive for Small Brushless DC Motors
z Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
DrainŦtoŦSource Voltage
GateŦtoŦSource Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t≤5s
Steady
State
t≤5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Symbol
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, TSTG
Source Current (Body Diode) (Note 2)
IS
Value
Ŧ20
±8.0
Ŧ3
Ŧ2.3
Ŧ4.1
1.45
2.3
Ŧ2.0
Ŧ1.5
0.7
Ŧ20
Ŧ55 to
150
Ŧ2
Unit
V
V
A
W
A
W
A
°C
A
1. Surface Mounted on FR4 Board using 1 in sq pad size, 2 oz Cu.
2. Surface Mounted on FR4 Board using minimum pad size, 2 oz Cu.
1
Pin connections:
A1
N/C 2
D3
K
6K
5G
D
4S
Marking:
SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted)
Parameter
Symbol
Limits
Unit
Peak repetitive reverse voltage
.
DC Blocking voltage
VRRM
VR
20
20
V
V
J = Specific Device Code
YWW = Date Code
Average rectified forward current
IF
1
A
Order information
PartN umber
WPM2006Ͳ6/TR
Package
DFN2*2- 6L
Shipping
3000Tape&Reel
http://www.willsemi.com
Page 1
0Dec, 2011 Rev 2.1
1 page 2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
WPM2006
Single Pulse
0.01
10--4
10--3
10--2
10--1
Square Wave Pulse Duration (sec)
1
10
Reverse Current vs. Junction Temperature
20
10
1
0.1
0.01
0.001
20 V
10 V
Forward Voltage Drop
5
TJ = 150_C
1
TJ = 25_C
0.0001
0
25 50 75 100 125
TJ -- Junction Temperature (_C)
150
150
0.1
0
Capacitance
0.2 0.4
0.6
0.8
VF -- Forward Voltage Drop (V)
1.0
120
90
60
30
http://www.willsemi.com
0
0 4 8 12 16 20
VKA -- Reverse Voltage (V)
Page 5
0Dec, 2011 Rev 2.1
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet WPM2006.PDF ] |
Número de pieza | Descripción | Fabricantes |
WPM2005 | Power MOSFET and Schottky Diode | WillSEMI |
WPM2005B | Power MOSFET and Schottky Diode | WillSEMI |
WPM2006 | Power MOSFET and Schottky Diode | WillSEMI |
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