(PDF) PE5A0DZ Datasheet - Dual N-Channel Enhancement Mode MOSFET

Número de pieza	PE5A0DZ
Descripción	Dual N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PE5A0DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 6mΩ @VGS = 4.5V ID 55A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TC = 25 °C 55 Continuous Drain Current2 TC = 100 °C TA = 25 °C ID 35 19 Pulsed Drain Current1 TA = 70 °C IDM 15 100 Avalanche Current IAS 32 Avalanche Energy L = 0.1mH EAS 51 TC = 25 °C 31 Power Dissipation TC = 100 °C TA = 25 °C PD 12.5 3.6 TA = 70 °C 2.3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RJA 35 Junction-to-case RJC 4 1Pulse width limited by maximum junction temperature. 2Package limitation current is 18A. 3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.4 1 2015/10/23 1 page PE5A0DZ Dual N-Channel Enhancement Mode MOSFET REV 1.4 5 2015/10/23 5 Page

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PDF PE5A0DZ Data sheet ( Hoja de datos )