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PDF EN29PL064 Data sheet ( Hoja de datos )
| Número de pieza | EN29PL064 | |
| Descripción | Simultaneous-Read/Write Flash Memory | |
| Fabricantes | Eon Silicon Solution | |
| Logotipo |  |
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EN29PL064/032
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on
ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the
compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
same as that of Eon delivered before. Please be advised with the change and appreciate your
kindly cooperation and fully support Eon’s product family.
Eon products’ New Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX
Lot Number: XXXXX
Date Code: XXXXX
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as an Eon product. Any
changes that have been made are the result of normal data sheet improvement and are noted in
the document revision summary, where supported. Future routine revisions will occur when
appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Eon continues to support existing part numbers beginning with “Eon” and “cFeon” top marking. To
order these products, during the transition please specify “Eon top marking” or “cFeon top marking”
on your purchasing orders.
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions
1 ©2004 Eon Silicon Solution, Inc.,
or modifications due to changes in technical specifications.
Rev. G, Issue Date: 2009/04/02
www.eonssi.com
1 page  
2. Ordering Information
EN29PL064
- 70 T
IP
EN29PL064/032
PACKAGING CONTENT
(Blank) = Conventional
P = RoHS compliant
TEMPERATURE RANGE
I = Industrial (-40°C to +85°C)
PACKAGE
T = 48-pin TSOP
SPEED
70 = 70ns
3. Product Selector Guide
Part Number
Speed Option VCC = 2.7 V – 3.6 V
Max Access Time, ns (tACC)
Max CE# Access , ns (tCE)
Max Page Access, ns (tPACC)
Max OE# Access, ns (tOE)
BASE PART NUMBER
EN = Eon Silicon Solution Inc.
29PL = FLASH, 3.0V Read Program Erase,
Simultaneous-Read/Write, Page-Mode
064 = 64 Megabit (4 M x 16-Bit)
032 = 32 Megabit (2 M x 16-Bit)
EN29PL032 / EN29PL064
70
70
25
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. G, Issue Date: 2009/04/02
www.eonssi.com
5 Page 
Table 9.3 Bank Select
Bank
Bank A
Bank B
Bank C
Bank D
EN29PL064/032
PL064: A21–A19, PL032: A20–A18
000
001, 010, 011
100, 101, 110
111
9.3 Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and
erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the
Unlock Bypass mode, only two write cycles are required to program a word, instead of four. Word
Program Command Sequence has details on programming data to the device using both standard and
Unlock Bypass command sequences.
An erase operation can erase one sector or the entire device. Table 9.3 indicates the set of address
space that each sector occupies. A “bank address” is the set of address bits required to uniquely select
a bank. Similarly, a “sector address” refers to the address bits required to uniquely select a
sector. Command Definitions has details on erasing a sector or the entire chip, or suspending /
resuming the erase operation.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. See
the timing specification tables and timing diagrams in section Reset for write operations.
9.3.1 Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This function is
primarily intended to allow faster manufacturing throughput at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock
Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the
pin to reduce the time required for program operations. The system would use a two-cycle
program command sequence as required by the Unlock Bypass mode. Removing VHH from the
WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on
WP#/ACC for operations other than accelerated programming, or device damage may result. In
addition, the WP#/ACC pin should be raised to VCC when not in use. That is, the WP#/ACC pin
should not be left floating or unconnected; inconsistent behavior of the device may result.
9.3.2 Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode.
The system can then read autoselect codes from the internal register (which is separate from the
memory array) on DQ15–DQ0. Standard read cycle timings apply in this mode. Refer to the
Table 9.6, Secured Silicon Sector Addresses and Autoselect Command Sequence for more
information.
9.4 Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3
V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but
This Data Sheet may be revised by subsequent versions 11
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. G, Issue Date: 2009/04/02
www.eonssi.com
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet EN29PL064.PDF ] | |
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