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FDQ7236AS Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDQ7236AS
Beschreibung Dual Notebook Power Supply N-Channel PowerTrench
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FDQ7236AS Datasheet, Funktion
January 2011
FDQ7236AS
Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package
General Description
The FDQ7236AS is designed to replace two single SO-
8 MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET TM technology. The FDQ7236AS
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode.
Features
Q2: 14 A, 30V. RDS(on) = 8.7 m@ VGS = 10V
RDS(on) = 10.5 m@ VGS = 4.5V
Q1: 11 A, 30V. RDS(on) = 13.2 m@ VGS = 10V
RDS(on) = 16 m@ VGS = 4.5V
SO-14
pin 1
S2
S2
S2
G1G2
Vin
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a & 1b)
(Note 1c & 1d)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b)
(Note 1c & 1d)
Package Marking and Ordering Information
Device Marking
FDQ7236AS
Device
FDQ7236AS
Reel Size
13”
Q2 Q1
30 30
±20 ±20
14 11
50 50
2.4 1.8
1.3 1.1
55 to +150
52 68
94 118
Units
V
V
A
W
°C
°C/W
Tape width
16mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDQ7236AS Rev C






FDQ7236AS Datasheet, Funktion
Typical Characteristics : Q2
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDQ7236AS Q2.
TIME : 12nS/div
Figure 12. FDQ7236AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6670A).
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power dissipated in the device.
0.1
0.01
TA = 125oC
0.001
TA = 100oC
0.0001
TA = 25oC
0.00001
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12nS/div
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
FDQ7236AS Rev C

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