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PDF C4111 Data sheet ( Hoja de datos )
| Número de pieza | C4111 | |
| Descripción | NPN Transistor - 2SC4111 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SC4111
Silicon NPN triple diffusion planar type
For horizontal deflection output
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
1500
1500
700
7
22
10
3.5
150
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
VEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 750V, IE = 0
VCB = 1500V, IE = 0
IC = 1mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 2.5A
IC = 7A, IB = 2.5A
VCE = 10V, IC = 1A, f = 0.5MHz
IC = 6A, Lleak = 5µH,
IB1 = 1.7A, IB2 = –1.7A
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
min typ max Unit
10 µA
1 mA
7V
5
38
5V
1.5 V
2 MHz
12 µs
0.6 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C4111.PDF ] | |
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