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PDF RF3928 Data sheet ( Hoja de datos )
| Número de pieza | RF3928 | |
| Descripción | 300W GaN Wide-Band Pulsed Power Amplifier | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RF3928 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
Package: Flanged Ceramic, 2 pin
Features
• Wideband Operation 2.8GHz to 3.4GHz
• Advanced GaN HEMT Technology
• Advanced Heat-Sink Technology
• Optimized Evaluation Board Layout for
50ohm Operation
• Integrated matching components for high
terminal impedances
• 50V Operation Typical Performance
o Pulsed Output Power 300W
o Small Signal Gain 11dB
o Drain Efficiency 50%
o -40oC to 85oC Operating Temperature
Applications
• Radar
• Air Traffic Control and Surveillance
• General Purpose Broadband Amplifiers
RF IN
VG
Pin 1 (CUT )
RF OUT
VD
Pin 2
GND
BASE
Functional Block Diagram
Product Description
The RF3928 is a 50V 300W high power discrete amplifier designed for S-Band pulsed
radar, Air Traffic Control and Surveillance and general purpose broadband amplifier
applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor
process, these high-performance amplifiers achieve high output power, high efficiency and
flat gain over a broad frequency range in a single package. The RF3928 is a matched GaN
transistor packaged in a hermetic, flanged ceramic package. This package provides
excellent thermal stability through the use of advanced heat sink and power dissipation
technologies. Ease of integration is accomplished through the incorporation of simple,
optimized matching networks external to the package that provide wideband gain and
power performance in a single amplifier
Ordering Information
RF3928
300W GaN Wide-Band Pulsed Power Amplifier
RF3928PCBA-410 Fully Assembled Evaluation Board Optimized for 2.8-3.5GHz; 50V
GaAs HBT
GaAs MESFET
InGaP HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
GaAs pHEMT
Si BiCMOS
Si CMOS
SiGe HBT
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
1 of 10
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
1 page  
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
5 of 10
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet RF3928.PDF ] | |
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