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PDF SiHF630S Data sheet ( Hoja de datos )
| Número de pieza | SiHF630S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
43
7.0
23
Single
0.40
D2PAK (TO-263)
K
DS
G
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF630S-GE3
SiHF630STRL-GE3a
Lead (Pb)-free
IRF630SPbF
SiHF630S-E3
IRF630STRLPbFa
SiHF630STL-E3a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
TC = 25 °C
VGS at 10 V
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
TC = 25 °C
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Peak Diode Recovery dV/dtc
EAS
IAR
EAR
PD
dV/dt
D2PAK (TO-263)
SiHF630STRR-GE3a
IRF630STRRPbFa
SiHF630STR-E3a
LIMIT
200
± 20
9.0
5.7
36
0.59
0.025
250
9.0
7.4
74
3.0
5.0
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
IRF630S, SiHF630S
Vishay Siliconix
101
150 °C
25 °C
100
91032_07
0.5
VGS = 0 V
0.7 0.9 1.1 1.3 1.5
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
103
5
2
102
5
2
10
5
2
1
5
2
0.1
0.1 2
Operation in this area limited
by RDS(on)
10 µs
100 µs
1 ms
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
5 1 2 5 10 2 5 102 2 5 103 2
5 104
91032_08
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10
8
6
4
2
0
25
91032_09
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SiHF630S.PDF ] | |
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