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PDF APL502B2 Data sheet ( Hoja de datos )
| Número de pieza | APL502B2 | |
| Descripción | LINEAR MOSFET | |
| Fabricantes | Microsemi | |
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APL502B2(G)
APL502L(G)
500V, 58A, 0.090Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
T-MaxTM
TO-264
• Higher FBSOA
• Popular T-MAX™ or TO-264 Package
• Higher Power Dissipation
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APL502B2_L (G)
UNIT
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
500
58
232
±30
±40
730
5.84
Volts
Amps
Volts
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
58
50
3000
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN TYP MAX UNIT
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)
Drain-Source On-State Resistance 2 (VGS = 12V, 29A)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
500
58
2
0.09
25
250
±100
4
Volts
Amps
Ohms
μA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet APL502B2.PDF ] | |
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