Datenblatt-pdf.com


GA20JT12-247 Schematic ( PDF Datasheet ) - GeneSiC

Teilenummer GA20JT12-247
Beschreibung Normally - OFF Silicon Carbide Junction Transistor
Hersteller GeneSiC
Logo GeneSiC Logo 




Gesamt 12 Seiten
GA20JT12-247 Datasheet, Funktion
Normally OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
D
GA20JT12-247
VDS
RDS(ON)
ID (Tc = 25°C)
ID (Tc > 125°C)
hFE (Tc = 25°C)
=
=
=
=
=
1200 V
50 mΩ
45 A
20 A
96
S
GD
TO-247
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA20JT12-247.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate Source Voltage
Reverse Drain Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 145°C
Conditions
TVJ = 175 oC,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 145 °C, tp > 100 ms
Value
1200
45
20
1.3
ID,max = 20
@ VDS ≤ VDSmax
>20
30
25
282 / 56
-55 to 175
Unit
V
A
A
A
A
Notes
Fig. 17
Fig. 17
Fig. 19
µs
V
V
W Fig. 16
°C
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 11






GA20JT12-247 Datasheet, Funktion
GA20JT12-247
Figure 19: Turn-Off Safe Operating Area
Figure 20: Transient Thermal Impedance
Figure 21: Drain Current Derating vs. Pulse Width
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 6 of 11

6 Page









GA20JT12-247 pdf, datenblatt
GA20JT12-247
Section VII: SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/sjt/GA20JT12-247_SPICE.pdf) into LTSPICE
(version 4) software for simulation of the GA20JT12-247.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 2.1
$
* $Date: 29-JAN-2015
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2015 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
.model GA20JT12 NPN
+ IS
9.833E-48
+ ISE
1.073E-26
+ EG
3.23
+ BF
100
+ BR
0.55
+ IKF
5000
+ NF
1
+ NE
2
+ RB
3.09
+ IRB
0.006
+ RBM
0.101
+ RE
0.005
+ RC
0.040
+ CJC
752.4E-12
+ VJC
3.17
+ MJC
0.480
+ CJE
3.014E-09
+ VJE
3.568
+ MJE
0.538
+ XTI
3
+ XTB
-1.5
+ TRC1
8.500E-3
+ VCEO
1200
+ ICRATING 20
+ MFG
GeneSiC_Semiconductor
*
* End of GA20JT12 SPICE Model
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 1

12 Page





SeitenGesamt 12 Seiten
PDF Download[ GA20JT12-247 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
GA20JT12-247Normally - OFF Silicon Carbide Junction TransistorGeneSiC
GeneSiC

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche