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PDF APM2300A Data sheet ( Hoja de datos )

Número de pieza APM2300A
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Anpec Electronics 
Logotipo Anpec Electronics Logotipo



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No Preview Available ! APM2300A Hoja de datos, Descripción, Manual

APM2300A
N-Channel Enhancement Mode MOSFET
Features
Pin Description
20V/6A , RDS(ON)=25m(typ.) @ VGS=10V
RDS(ON)=32m(typ.) @ VGS=4.5V
RDS(ON)=40m(typ.) @ VGS=2.5V
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
SOT-23 Package
Applications
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
D
GS
Top View of SOT-23
D
G
Ordering and Marking Information
S
N-Channel MOSFET
APM2300A
H andling C ode
Temp. Range
Package Code
Package Code
A : SOT-23
O perating Junction Tem p. R ange
C : -55 to 1 50°C
H andling C ode
TR : Tape & Reel
APM2300A A :
A00X
X - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
±12 V
ID* Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
6
20 A
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
1
www.anpec.com.tw

1 page




APM2300A pdf
APM2300A
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
20
10
TJ=150°C
TJ=25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD -Source-to-Drain Voltage (V)
14
12
10
8
6
4
2
0
0.01
Single Pulse Power
0.1 1 10
Time (sec)
100
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
0.01
1E-4
SINGLE PULSE
1E-3
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.TJM-TA=PDMZthJA
0.01 0.1
1
Square Wave Pulse Duration (sec)
10
100
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
5
www.anpec.com.tw

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