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SH8K22 Schematic ( Datenblatt PDF ) - Rohm

Teilenummer SH8K22
Beschreibung 4V Drive Nch+Nch MOSFET
Hersteller Rohm
Logo Rohm Logo 

Gesamt 5 Seiten
		
SH8K22 Datasheet, Funktion
4V Drive Nch+Nch MOSFET
SH8K22
Structure
Silicon N-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter, Inverter
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8K22
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Chanel temperature
Range of Storage temperature
*1 PW 10s、Duty cycle 1
VDSS
45
V
VGSS
±20
V
ID ±4.5
A
IDP *1
±18
A
IS 1
A
ISP *1
18
A
PD *2
2
1.4
W / TOTAL
W / ELEMENT
Tch 150
oC
Tstg -55 to +150
oC
*2 Mounted on a ceramic board
Inner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2)
(3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
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c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A


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