Datenblatt-pdf.com

STS3P6F6 Schematic ( Datenblatt PDF ) - STMicroelectronics

Teilenummer STS3P6F6
Beschreibung P-channel Power MOSFET
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 

Gesamt 16 Seiten
		
STS3P6F6 Datasheet, Funktion
STS3P6F6
P-channel 60 V, 0.13 typ., 3 A STripFET™ F6
Power MOSFET in a SO-8 package
Datasheet - production data
Features
8 76 5
4
123
SO-8
Figure 1. Internal schematic diagram
D (5,6,7,8)
Order code
STN3P6F6
VDSS
60 V
RDS(on)max
0.16 @ 10 V
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
ID
3A
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the 6th generation of STripFET™
technology, with a new gate structure. The
resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
G (4)
S (1,2,3)
Order code
STS3P6F6
Table 1. Device summary
Marking
Package
3K60
SO-8
Packaging
Tape and reel
Note:
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
July 2014
This is information on a product in full production.
DocID024437 Rev 2
1/16
www.st.com
16






STS3P6F6 Datasheet, Funktion
Electrical characteristics
STS3P6F6
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
,' *,3*6$
$
Figure 3. Thermal impedance
.
į 
*,3*6$
 2S/HLUPDLWWLHRGQELQ\WPKLVD[DU5H'D6L VRQ




7M ƒ&
7SFE ƒ&
6LQJOHSXOVH

PV
PV
V
9'6 9
Figure 4. Output characteristics
ID
(A) VGS= 10 V
AM15340v1
25







6LQJOHSXOVH
SFE

        WS V
Figure 5. Transfer characteristics
ID AM15346v1
(A)
25 VDS= 9 V
20
VGS= 6 V
20
15 15
VGS= 5 V
10 10
5 VGS= 4 V
0
0 5 10 VDS(V)
Figure 6. Gate charge vs gate-source voltage
VGS
(V)
10
VDD=30V
ID=3A
AM15341v1
8
6
4
2
5
0
2 3 4 5 6 7 8 9 10 VGS(V)
Figure 7. Static drain-source on-resistance
RDS(on)
(mΩ)
VGS=10V
AM15350v1
180
160
140
120
0
0 2 4 6 Qg(nC)
100
1 2 3 4 5 6 7 8 9 ID(A)
6/16 DocID024437 Rev 2

6 Page







STS3P6F6 pdf, datenblatt
Package mechanical data
Figure 17. (a) SO-8 recommended footprint
STS3P6F6
Footprint_0016023_G_FU
a. All dimensions are in millimeters.
12/16
DocID024437 Rev 2

12 Page


SeitenGesamt 16 Seiten
PDF Download[ STS3P6F6.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
STS3P6F6P-channel Power MOSFETSTMicroelectronics
STMicroelectronics

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com    |   2018   |  Kontakt  |   Suche