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US6M1 Schematic ( Datenblatt PDF ) - Rohm

Teilenummer US6M1
Beschreibung 4V+2.5V Drive Nch+Nch MOSFET
Hersteller Rohm
Logo Rohm Logo 

Gesamt 8 Seiten
		
US6M1 Datasheet, Funktion
Transistors
US6M1
4V+2.5V Drive Nch+Nch MOSFET
US6M1
zStructure
Silicon N-channel / P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
zApplication
Power switching, DC / DC converter.
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : M01
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US6M1
Taping
TR
3000
zEquivalent circuit
(6) (5) (4)
1
2 2
1
(1) (2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
Tr1 : Nchannel Tr2 : Pchannel
Unit
30 20 V
20 12 V
±1.4 ±1
A
±5.6 ±4
A
0.6 0.4 A
5.6 4 A
1 W / TOTAL
0.7 W / ELEMENT
150 °C
55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
2 Mounted on a ceramic board.
Symbol
Rth (ch-a)
Limits
125
179
Unit
°C / W /TOTAL
°C / W / ELEMENT
Rev.B
1/7






US6M1 Datasheet, Funktion
Transistors
N-ch
zMeasurement circuit
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Measurement Circuit
US6M1
Pulse Width
50%
VGS 10%
90% 50%
VDS
10%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Rev.B
6/7

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