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US6M11 Schematic ( Datenblatt PDF ) - Rohm

Teilenummer US6M11
Beschreibung 1.5V Drive Nch+Pch MOSFET
Hersteller Rohm
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Gesamt 8 Seiten
		
US6M11 Datasheet, Funktion
1.5V Drive Nch+Pch MOSFET
US6M11
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
SOT-363T
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) Low on-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in G-S Protection Diode.
Abbreviated symbol : M11
zApplications
Switching
zInner circuit
(6) (5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US6M11
Taping
TR
3000
1
2
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(3)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
Tr1 : Nchannel Tr2 : Pchannel
Unit
20 12 V
±10 ±10
V
±1.5 ±1.3
A
±6 ±5.2 A
0.5 0.5 A
6
5.2
A
1.0 W / TOTAL
0.7 W / ELEMENT
150 °C
55 to +150
°C
2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/7
2009.07 - Rev.A






US6M11 Datasheet, Funktion
US6M11
10
VGS=0V
Pulsed
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
600
Ta=25°C
Pulsed
500
400 ID= -0.6A
300 ID= -1.3A
200
100
0
0 2 4 6 8 10
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Data Sheet
1000
100
tf
td(off)
Ta=25°C
VDD= -6V
VGS= -4.5V
RG=10
Pulsed
10
1
0.01
tr
td(on)
0.1 1
10
DRAIN-CURRENT : -ID[A]
Fig.12 Switching Characteristics
5
4
3
2 Ta=25°C
VDD= -6V
ID= -1.3A
1 RG=10
Pulsed
0
0 0.5 1 1.5 2 2.5 3
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
1000
100 Ciss
10
1
0.01
Coss
Crss
Ta=25°C
f=1MHz
VGS=0V
0.1 1 10 100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
6/7
2009.07 - Rev.A

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