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Teilenummer | EMH1307 |
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Beschreibung | P-Channel Power MOSFET | |
Hersteller | ON Semiconductor | |
Logo | ||
Gesamt 7 Seiten Ordering number : ENA1715A
EMH1307
P-Channel Power MOSFET
–20V, –6.5A, 26mΩ, Single EMH8
http://onsemi.com
Features
• ON-resistance RDS(on)1 : 20mΩ(typ.)
• 1.8V drive
• Protection diode in
• Input Capacitance Ciss=1100pF(typ.)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings
--20
±10
--6.5
--26
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-001
0.2
8
5
0.125 EMH1307-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
1
0.5
2.0
4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
TL
Electrical Connection
876 5
JG
Lot No.
12 3 4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/O2010PE TKIM TC-00002339 No. A1715-1/7
Outline Drawing
EMH1307-TL-H
EMH1307
Land Pattern Example
Mass (g) Unit
0.008
* For reference
mm
0.3
Unit: mm
0.5
No. A1715-6/7
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ EMH1307 Schematic.PDF ] |
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