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Número de pieza | EMA09N03CS | |
Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMA09N03CS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
9mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=37.5A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMA09N03CS
LIMITS
±20
50
35
140
37.5
70
15
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/8/22
TYPICAL
MAXIMUM
2.5
75
UNIT
°C / W
p.1
1 page EMA09N03CS
G A T E C H A R G E C H A R A C T E R IS T IC S
12
ID= 2 5 A
10 4
C A P A C IT A N C E C H A R A C T E R IS T IC S
10
8
6
V DS =5V
15V
10V
10 3
C iss
C o ss
4
10 2
C rss
2
0
0
6 12
18
Q g ,G A T E C H A R G E ( n C )
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D R A IN ‐S O U R C E V O L T A G E ( V )
30
MAXIMUM SAFE OPERATING AREA
300
200
100 R d s (o n ) Limit
10μ s
50
20
10
5
2
100μ s
1ms
10ms
D1C00ms
1
0.5
VG S = 10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
0.5 1
10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
SINGLE PULSE
Rθ J C = 2.5° C/W
TC = 25° C
2500
2000
1500
1000
500
0
100 0.01 0.1 1 10 100 1000
SINGLE PULSE TIME ( mSEC )
1
Duty Cycle = 0.5
0.5
Transient Thermal Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1 10
t 1 ,Time ( mSEC )
1.Duty Cycle,D =
t1
t2
2.Rθ J C =2.5°C/W
3.TJ ‐ TC = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
100
1000
2013/8/22
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMA09N03CS.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMA09N03CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
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