|
|
Teilenummer | C1730 |
|
Beschreibung | Silicon NPN RF Transistor | |
Hersteller | INCHANGE | |
Logo | ||
Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC1730
DESCRIPTION
·Low Base Time Constant;
rbb’ • CC = 10 ps TYP.
·High Gain Bandwidth Product
fT= 1100 MHz TYP.
·Low Output Capacitance;
COB = 1.5 pF Max.
APPLICATIONS
·Designed for TV VHF, UHF tuner oscillator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30 V
VCEO Collector-Emitter Voltage
15 V
VEBO Emitter-Base Voltage
5V
IC Collector Current-Continuous
Collector Power Dissipation
PC @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
50 mA
0.25 W
125 ℃
-55~125
℃
isc Website:www.iscsemi.cn
| ||
Seiten | Gesamt 2 Seiten | |
PDF Download | [ C1730 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
C1730 | Silicon NPN RF Transistor | INCHANGE |
C1733 | Compound Transistor | Renesas |
C1735 | NPN Transistor - 2SC1735 | ETC |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |