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RJK1001DPN-E0 Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJK1001DPN-E0
Beschreibung N-Channel MOS FET
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 7 Seiten
RJK1001DPN-E0 Datasheet, Funktion
RJK1001DPN-E0
N-Channel MOS FET
100 V, 80 A, 5.5 m
Features
High speed switching
Low drive current
Low on-resistance RDS(on) = 4.4 mtyp. (at VGS = 10 V)
Package TO-220AB
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
123
1G
Preliminary Datasheet
R07DS0619EJ0200
Rev.2.00
Aug 24, 2012
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note2
EAS Note2
Pch Note3
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L = 100 H, Tch = 25C, Rg 50,
3. Tc = 25C
Ratings
100
±20
80
240
80
40
160
200
0.63
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0619EJ0200 Rev.2.00
Aug 24, 2012
Page 1 of 6






RJK1001DPN-E0 Datasheet, Funktion
RJK1001DPN-E0
Package Dimensions
Package Name
TO-220AB
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AG-A
Previous Code
TO-220ABS
MASS[Typ.]
2.1g
9.9 ± 0.2
φ3.6 ± 0.2
4.5 ± 0.2
1.30
+
0.10
0.05
Preliminary
Unit: mm
1.62 Max
0.80 ± 0.10
2.54
2.54
10.0 ± 0.2
2.6 Max
0.50
+
0.10
0.05
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJK1001DPN-E0-T2
50 pcs
Magazine (Tube)
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0619EJ0200 Rev.2.00
Aug 24, 2012
Page 6 of 6

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