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PDF RJL5012DPP-M0 Data sheet ( Hoja de datos )
| Número de pieza | RJL5012DPP-M0 | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJL5012DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Built-in fast recovery diode
• Low on-resistance
RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
VGSS
IDNote4
ID
Note1
(pulse)
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0419EJ0100
Rev.1.00
May 26, 2011
D
1. Gate
2. Drain
3. Source
S
Ratings
500
±30
12
36
12
36
3
0.5
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0419EJ0100 Rev.1.00
May 26, 2011
Page 1 of 6
1 page  
RJL5012DPP-M0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
TC = 25°C
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1 Shot
Pulse
0.001
10 μ
100 μ
θch–c(t) = γS (t) • θch–c
θch–c = 4.17°C/W, TC = 25°C
PDM
D
=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 250 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0419EJ0100 Rev.1.00
May 26, 2011
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJL5012DPP-M0.PDF ] | |
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