Datenblatt-pdf.com


C30921SH Schematic ( PDF Datasheet ) - Excelitas

Teilenummer C30921SH
Beschreibung High-speed solid state detectors
Hersteller Excelitas
Logo Excelitas Logo 




Gesamt 14 Seiten
C30921SH Datasheet, Funktion
DATASHEET
Photon Detection
C30902 and C30921 Series
High-speed solid state detectors for low light level applications
The C30902EH series of avalanche photodiodes is ideal for a wide range of applications,
including LIDAR, range-finding, small-signal fluorescence, photon counting and bar code
scanning.
Excelitas Technologies’ C30902EH series of avalanche photodiodes is fabricated
with a double-diffused “reach-through” structure. This structure provides high
responsivity between 400 and 1000 nm as well as extremely fast rise and fall times
at all wavelengths. The responsivity of the device is independent of modulation
frequency up to about 800 MHz. The detector chip is hermetically-sealed behind a
flat glass window in a modified TO-18 package. The useful diameter of the
photosensitive surface is 0.5 mm.
The C30921EH is packaged in a lightpipe TO-18 which allows efficient coupling of
light to the detector from either a focused spot or an optical fiber up to 0.25 mm in
diameter. The hermetically-sealed TO-18 package allows fibers to be mated to the
end of the lightpipe to minimize signal losses without fear of endangering detector
stability. The C30902EH-2 or C30902SH-2, with hermetic TO-18 package with inline
905nm passband filter and the C30902BH, with hermetic ball lens, complete the
C30902 family.
Key Features
High quantum efficiency: 77%
typical at 830 nm
C30902SH and C30921SH can be
operated in Geiger mode
C30902EH/SH-2 version with
built-in 905 nm filter
C30902BH version with ball-lens
Hermetically sealed package
Low Noise at room temperature
High responsivity internal
avalanche gains in excess of 150
Spectral response range
(10% Q.E. points) 400 to 1000 nm
Time response typically 0.5 ns
Wide operating temperature
range -40°C to +70°C
RoHS compliant
Applications
LIDAR
Range finding
Small-signal fluorescence
Photon counting
Bar code scanning
Both C30902SH and C30921SH are selected C30902EH and C30921EH photodiodes
having extremely low noise and bulk dark-current. They are intended for ultra-low
light level applications (optical power less than 1 pW) and can be used in either
their normal linear mode (Vr < Vbr) at gains up to 250 or greater, or as photon
counters in the “Geiger” mode (Vr > Vbr) where a single photoelectron may trigger
an avalanche pulse of about 108 carriers. In this mode, no amplifiers are necessary
and single-photon detection probabilities of up to approximately 50% are possible.
Photon-counting is also advantageous where gating and coincidence techniques are
employed for signal retrieval.
www.excelitas.com






C30921SH Datasheet, Funktion
C30902 and C30921 Series
High-speed solid state detectors for low light level applications
Figure 6 Typical Gain Bandwidth Product as a function of Gain
Case temperature of 22 °C
400
350
300
250
200
150
100
50
0
0 100 200 300 400 500 600 700 800 900 1000
Gain
Figure 7 Geiger mode, photoelectron detection probability @ 830nm as a function of voltage above Vbr
Case temperature of 22 °C
60
50
40
30
20 Ideal
10 Typical
0
0 5 10 15 20 25
Voltage above breakdown voltage (Vr - Vbr)
www.excelitas.com
Page 6 of 14
C30902 and C30921 Series-Rev.1-2014.09

6 Page









C30921SH pdf, datenblatt
C30902 and C30921 Series
High-speed solid state detectors for low light level applications
Passive-Quenching Circuit
The simplest, and in many case a perfectly adequate method of quenching a breakdown pulse, is through the use of a current
limiting load resistor. An example of such a “passive” quenching is shown in Figure 16. The load-line of the circuit is shown in
Figure 8. To be in the conducting state at Vbr two conditions must be met:
1. The Avalanche must have been triggered by either a photoelectron or a bulk-generated electron entering at the
avalanche region of the diode. (Note: holes are inefficient at starting avalanches in silicon.) The probability of an
avalanche being initiated is discussed above.
2. To continue to be in the conducting state a sufficiently large current, called the latching current ILATCH, must be passing
through the device so that there is always an electron or hole in the avalanche region. Typically in the C30902SH and
C30921SH, ILATCH = 50 A. For currents (Vr-Vbr)/RL, much greater than ILATCH, the diode remains conducting. If the
current (Vr-Vbr)/RL, is much less than ILATCH, the diode switches almost immediately to the non-conducting state. If
(Vr-Vbr)/RL is approximately equal to ILATCH, then the diode will switch at an arbitrary time from the conducting to the
non-conducting state depending on when the number of electrons and holes in the avalanche region statistically
fluctuates to zero.
When RL is large, the photodiode is normally conducting, and the operating point is at Vr-IDSRL in the non-conducting state.
Following an avalanche breakdown, the device recharges to the voltage Vr - IDSRL with the time constant RLC, where C is the
total device capacitance including stray capacitance. Using C = 1.6 pF and RL = 200 ka recharge time constant of 0.32 s is
calculated. The rise-time is fast, 5 to 50ns, and decreases as Vr - Vbr increases, and is very dependent on the capacitances of
the load resistors, leads, etc. The jitter at the half-voltage point is typically the same order of magnitude as the rise-time. For
timing purposes where it is important to have minimum jitter, the lowest possible threshold of the rising pulse should be used.
Figure 16 Sample of passive quench circuit
0 200 400 600 800 1000
Time [ns]
www.excelitas.com
Page 12 of 14
C30902 and C30921 Series-Rev.1-2014.09

12 Page





SeitenGesamt 14 Seiten
PDF Download[ C30921SH Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
C30921S(C309xxx) Silicon Avalanche PhotodiodesPerkinElmer Optoelectronics
PerkinElmer Optoelectronics
C30921SHSilicon Avalanche PhotodiodesPerkinElmer Optoelectronics
PerkinElmer Optoelectronics
C30921SHHigh-speed solid state detectorsExcelitas
Excelitas

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche