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Teilenummer | CEM3317 |
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Beschreibung | P-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
Logo | ||
Gesamt 7 Seiten CEM3317
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V.
RDS(ON) = 52mΩ @VGS = -4.5V.
-30V, -4.9A, RDS(ON) = 52mΩ @VGS = -10V.
RDS(ON) = 85mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
876 5
123 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Channel 1
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -30
VGS ±20
ID -6.2
IDM -25
Channel 2
-30
±20
-4.9
-20
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.Sep
http://www.cet-mos.com
CHANNEL 1
10 VDS=-15V
ID=-6.2A
8
6
4
2
0
0 5 10 15 20
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
CHANNEL 2
10 VDS=-15V
ID=-4.9A
8
6
4
2
0
0 3 6 9 12
Qg, Total Gate Charge (nC)
Figure 15. Gate Charge
CEM3317
102
RDS(ON)Limit
101
100
1ms
10ms
100ms
1s
DC
10-1
TA=25 C
TJ=150 C
Single Pulse
10-2 10-2 10-1 100 101 102
-VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
Operating Area
RDS(ON)Limit
101
100
10ms
100ms
1s
DC
10-1 TA=25 C
TJ=150 C
Single Pulse
10-1 100 101
-VDS, Drain-Source Voltage (V)
Figure 16. Maximum Safe
Operating Area
6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ CEM3317 Schematic.PDF ] |
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