|
|
PDF CEM8958A Data sheet ( Hoja de datos )
| Número de pieza | CEM8958A | |
| Descripción | Dual Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CEM8958A (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
CEM8958A
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 42mΩ @VGS = 4.5V.
-30V, -4.8A, RDS(ON) = 60mΩ @VGS = -10V.
RDS(ON) = 85mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
SOP-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous@TA= 25 C
@TA= 70 C
Drain Current-Pulsed a
ID
6.8
5.4
IDM 27
P-Channel
-30
±20
-4.8
-3.7
-19
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJc
Limit
62.5
40
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 3. 2014.Oct
http://www.cetsemi.com
1 page  
P-CHANNEL
15
12
9
6
-VGS=10,8V
-VGS=6V
-VGS=5V
3
0
0 0.5
1 1.5
-VGS=4V
-VGS=3V
2 2.5
3
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
900
Ciss
750
600
450
300
150 Coss
0 Crss
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
5
CEM8958A
10
8
6
4
25 C
2
TJ=125 C
-55 C
0
0123456
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2
ID=-4.8A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CEM8958A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CEM8958 | Dual Enhancement Mode Field Effect Transistor(N and P Channel) |  Chino-Excel Technology |
| CEM8958A | Dual Enhancement Mode Field Effect Transistor | CET |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |