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Teilenummer | CEM8968 |
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Beschreibung | Dual Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
Logo | ||
Gesamt 7 Seiten CEM8968
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 7A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 40mΩ @VGS = 4.5V.
-30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V.
RDS(ON) = 52mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 7
IDM 28
P-Channel
-30
±20
-6.2
-25
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2007.Jan
http://www.cet-mos.com
N-CHANNEL
10 VDS=15V
ID=5.8A
8
6
4
2
0
0 2.5
5 7.5
10 12.5
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
P-CHANNEL
10 VDS=-15V
ID=-5.3A
8
6
4
2
0
0 5 10 15 20
Qg, Total Gate Charge (nC)
Figure 15. Gate Charge
CEM8968
102
RDS(ON)Limit
101
100
1ms
10ms
100ms
1s
DC
5
10-1
TA=25 C
TJ=150 C
10-2 Single Pulse
10-2 10-1 100 101 102
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
Operating Area
102
RDS(ON)Limit
101
100
1ms
10ms
100ms
1s
DC
10-1
TA=25 C
TJ=150 C
10-2 Single Pulse
10-2 10-1 100 101 102
-VDS, Drain-Source Voltage (V)
Figure 16. Maximum Safe
Operating Area
6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ CEM8968 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CEM8968 | Dual Enhancement Mode Field Effect Transistor | CET |
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