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CEH2305 Schematic ( PDF Datasheet ) - CET

Teilenummer CEH2305
Beschreibung P-Channel Enhancement Mode Field Effect Transistor
Hersteller CET
Logo CET Logo 




Gesamt 4 Seiten
CEH2305 Datasheet, Funktion
CEH2305
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -4.9A , RDS(ON) = 52m@VGS = -10V.
RDS(ON) = 65m@VGS = -4.5V.
RDS(ON) = 119m@VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G(3)
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID -4.9
IDM -20
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2013.Jun
http://www.cet-mos.com





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