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SM1F02NSU Schematic ( Datenblatt PDF ) - Sinopower

Teilenummer SM1F02NSU
Beschreibung N-Channel Enhancement Mode MOSFET
Hersteller Sinopower
Logo Sinopower Logo 



Gesamt 11 Seiten
		
SM1F02NSU Datasheet, Funktion
SM1F02NSU
Features
· 150V/35A,
RDS(ON)= 46mW(max.) @ VGS= 10V
RDS(ON)= 52mW(max.) @ VGS= 6V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of TO-252-3
D
Applications
· Power Management in TV Converter.
· DC-DC Converter.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM1F02NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM1F02NS U :
SM1F02N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2013
1
www.sinopowersemi.com






SM1F02NSU Datasheet, Funktion
SM1F02NSU
Typical Operating Characteristics (Cont.)
®
Drain-Source On Resistance
2.5
VGS = 10V
IDS = 10A
2.0
1.5
1.0
0.5
0.0 RON@Tj=25oC: 35mW
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
60
10
T =150oC
j
Tj=25oC
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source - Drain Voltage (V)
Capacitance
3000
2700
Frequency=1MHz
2400
2100
1800
Ciss
1500
1200
900
600
300 Crss
Coss
0
0 8 16 24 32 40
VDS - Drain-Source Voltage (V)
Gate Charge
10
V = 75V
9
DS
IDS= 10A
8
7
6
5
4
3
2
1
0
0 8 16 24 32
QG - Gate Charge (nC)
40
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2013
6
www.sinopowersemi.com

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