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PDF SM1F02NSF Data sheet ( Hoja de datos )

Número de pieza SM1F02NSF
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Sinopower 
Logotipo Sinopower Logotipo



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No Preview Available ! SM1F02NSF Hoja de datos, Descripción, Manual

SM1F02NSF
Features
· 150V/35A,
RDS(ON)=46mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in TV Inverter.
®
N-Channel Enhancement Mode MOSFET
Pin Description
GDS
Top View of TO-220
D
G
Ordering and Marking Information
S
N-Channel MOSFET
SM1F02NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/Tube)
Assembly Material
G : Halogen and Lead Free Device
SM1F02NS F : SM1F02N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - December, 2013
1
www.sinopowersemi.com

1 page




SM1F02NSF pdf
SM1F02NSF
®
Typical Operating Characteristics (Cont.)
Output Characteristics
50
45 VGS=5,6,7,8,9,10V
40
35
30 4.5V
25
20
15
10 4V
5
3.5V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
55
50
45
40
35 VGS=10V
30
25
20
15
0 5 10 15 20 25 30
ID- Drain Current (A)
Gate-Source On Resistance
80
IDS=17A
70
60
50
40
30
20
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - December, 2013
5
www.sinopowersemi.com

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