STGB10NC60HD - STGD10NC60HD
STGF10NC60HD - STGP10NC60HD
600 V - 10 A - very fast IGBT
Features
■ Low on-voltage drop (VCE(sat))
■ Low CRES / CIES ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
Applications
■ High frequency motor controls
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
3
1
D²PAK
2
3
1
DPAK
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB10NC60HDT4
GB10NC60HD
STGD10NC60HDT4
GD10NC60HD
STGF10NC60HD
GF10NC60HD
STGP10NC60HD
GP10NC60HD
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
December 2008
Rev 5
1/19
www.st.com
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Electrical characteristics STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD
Table 8. Collector-emitter diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
VF Forward on-voltage
IF = 5 A
IF = 5 A, TC = 125 °C
trr Reverse recovery time
IF = 5 A, VR = 40 V,
Qrr Reverse recovery charge di/dt = 100 A/μs
Irrm Reverse recovery current (see Figure 21)
trr Reverse recovery time
IF = 5 A,VR = 40 V,
Qrr Reverse recovery charge TC =125 °C, di/dt = 100 A/μs
Irrm Reverse recovery current (see Figure 21)
2 2.45
1.7
V
V
22 ns
14 nC
1.3 A
33 ns
30 nC
1.85 A
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Package mechanical data STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD
D²PAK (TO-263) mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
A1 0.03
0.23
0.001
0.009
b 0.70
0.93
0.027
0.037
b2 1.14
1.70
0.045
0.067
c 0.45
0.60
0.017
0.024
c2 1.23
1.36
0.048
0.053
D 8.95
9.35
0.352
0.368
D1 7.50
0.295
E 10
10.40
0.394
0.409
E1 8.50
0.334
e 2.54
0.1
e1 4.88
5.28
0.192
0.208
H 15
15.85
0.590
0.624
J1 2.49
2.69
0.099
0.106
L 2.29
2.79
0.090
0.110
L1 1.27
1.40
0.05
0.055
L2 1.30
1.75
0.051
0.069
R 0.4
0.016
V2 0°
8° 0°
8°
12/19
0079457_M

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