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Teilenummer | SVF10N65T |
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Beschreibung | 650V N-CHANNEL MOSFET | |
Hersteller | Silan Microelectronics | |
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Gesamt 8 Seiten SVF10N65T/F_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N65T/F is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 10A,650V,RDS(on)(typ.)=0.80Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF10N65T
SVF10N65F
Package
TO-220-3L
TO-220F-3L
Marking
SVF10N65T
SVF10N65F
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
Page 1 of 8
SVF10N65T/F_Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V
VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
10V
VDS
VGS
RG
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
DUT
VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
Page 6 of 8
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ SVF10N65T Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
SVF10N65F | 650V N-CHANNEL MOSFET | Silan Microelectronics |
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