Datenblatt-pdf.com


CEM6355 Schematic ( PDF Datasheet ) - CET

Teilenummer CEM6355
Beschreibung P-Channel Enhancement Mode Field Effect Transistor
Hersteller CET
Logo CET Logo 




Gesamt 4 Seiten
CEM6355 Datasheet, Funktion
CEM6355
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-60V, -6A, RDS(ON) = 45m@VGS = -10V.
RDS(ON) = 65m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -6
IDM -24
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2006.Nov
http://www.cetsemi.com





SeitenGesamt 4 Seiten
PDF Download[ CEM6355 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
CEM6355P-Channel Enhancement Mode Field Effect TransistorCET
CET

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche