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Teilenummer | CEP09N7G |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CEP09N7G/CEB09N7G
CEF09N7G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP09N7G
CEB09N7G
CEF09N7G
VDSS
700V
700V
700V
RDS(ON)
1Ω
1Ω
1Ω
ID
9A
9A
9A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
700
±30
9
36
166
1.3
9d
36 d
50
0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2008.Oct
http://www.cet-mos.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEP09N7G Schematic.PDF ] |
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