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2N3878 Schematic ( Datenblatt PDF ) - Microsemi

Teilenummer 2N3878
Beschreibung NPN Transistor
Hersteller Microsemi
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2N3878 Datasheet, Funktion
ISCFdÈ 3 3 text/html
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2N3878 (#23150)
RFQ/Sample
NPN Transistor
Division
Lawrence
Mil -Spec
(none)
Shipping
(none)
Datasheet
Qual Data
(none)
Contact Microsemi
Package
Maximum Electrical Rating
Power Dissipation
Collector Current
Breakdown Voltage Collector -to-Base
Voltage Collector to Emitter Open
Voltage Emitter to Base Open
Symbol
Power
IC
BV(CBO)
VCEO
BVEBO
Max Unit
35 W
7A
120 V
50 V
7V
Electrical Rating
Symbol Min Typ Max Unit
Collector Emitter Saturation Voltage
(IB=0.4 mA, I C=0.5 mA, TA=25 ºC,300µ s pulse) VCE(sat)
2V
DC Current Gain
(IC=0.5 mA, TA=25 ºC,300µ s pulse)
HFE 50
200
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