Transistors
Power Transistor (−80V, −4A)
2SB1644
2SB1644
!Features
1) Low saturation voltage.
(Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A)
2) Excellent DC current gain characteristics.
!External dimensions (Units : mm)
13.1
3.2
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw = 100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−80
−80
−5
−4
−6
30
150
−55~+150
Unit
V
V
V
A (DC)
*A (Pulse)
W (Tc = 25°C)
°C
°C
8.8
0.5Min.
ROHM : PSD3
EIAJ : SC-83A
(1) Base
(2) Collector
(3) Emitter
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1644
PSD3
EF
T100
1000
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
* Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
−80
−60
−5
−
−
−
−
100
−
−
Typ.
−
−
−
−
−
−
−
−
12
100
Max.
−
−
−
−10
−10
−1.5
−1.5
320
−
−
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
Conditions
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −80V
VEB = −4V
IC/IB = −3A/−0.3A
IC/IB = −3A/−0.3A
VCE/IC = −5V/−1A
VCE = −5V , IE = 0.5A , f = 5MHz
VCB = −10V , IE = 0A , f = 1MHz
*
*
*