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PDF CEP9060N Data sheet ( Hoja de datos )
| Número de pieza | CEP9060N | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CEP9060N (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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CEP9060N/CEB9060N
CEF9060N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP9060N
CEB9060N
CEF9060N
VDSS
55V
55V
55V
RDS(ON)
10.5mΩ
10.5mΩ
10.5mΩ
ID
90A
90A
90A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package & TO-220F full-pak for through hole.
D
G
D
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263 TO-220F
VDS 55
VGS ±20
ID 90 90 e
IDM f
360 360 e
166 49
PD 1.11 0.33
EAS
IAS
TJ,Tstg
325 325
50 50
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.9
62.5
3
65
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 4. 2007.Oct.
http://www.cet-mos.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEP9060N.PDF ] | |
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