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Teilenummer | CEP740G |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CEP740G/CEB740G
CEF740G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP740G
CEB740G
VDSS
400V
400V
CEF740G
400V
RDS(ON)
0.55Ω
0.55Ω
0.55Ω
ID
10A
10A
10A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 400
VGS ±30
ID 10 10 e
IDM f
40 40 e
125 40
PD
1.0 0.32
Single Pulsed Avalanche Energy g
EAS 400
Single Pulsed Avalanche Current g
IAS 10
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.0
62.5
3.1
65
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2007.Nov.
http://www.cet-mos.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEP740G Schematic.PDF ] |
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